SI2300DS-T1-GE3

SI2300DS-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000048350609

描述：MOSFET N-CH 30V SOT-23

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min13 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage600 mV

TechnologySi

Id - Continuous Drain Current3.6 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 12 V, + 12 V

Typical Turn-On Delay Time10 ns

Width1.6 mm

Rds On - Drain-Source Resistance68 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time20 ns

Height1.45 mm

Length2.9 mm

MXHTS85412101

KRHTS8541219000

Mounting StyleSMD/SMT

Package / CaseSOT-23-3

Qg - Gate Charge6.5 nC

JPHTS8541210101

CAHTS8541210000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

PackagingReel

PackagingCut Tape

PackagingMouseReel

RoHS Details

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time11 ns

BrandVishay Semiconductors

ManufacturerVishay

SeriesSI2

Factory Pack Quantity3000

Product CategoryMOSFET

Unit Weight0.000282 oz

Product TypeMOSFET

USHTS8541210095

DescriptionMOSFET 30V Vds 12V Vgs SOT-23

Pd - Power Dissipation1.7 W

Part # AliasesSI2300DS-GE3

Vds - Drain-Source Breakdown Voltage30 V

TradenameTrenchFET

Number of Channels1 Channel

Rise Time15 ns