参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityN-Channel
Id - Continuous Drain Current12 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
JPHTS8541290100
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
CAHTS8541290000
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance370 mOhms
ImageSTMicroelectronics STF13N80K5
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-220-3
PackagingTube
DescriptionMOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect
Mounting StyleThrough Hole
TARIC8541290000
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge29 nC
BrandSTMicroelectronics
RoHS Details
MXHTS85412999
SeriesSTF13N80K5
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time16 ns
Unit Weight0.011640 oz
CNHTS8541210000
Pd - Power Dissipation35 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time16 ns
Moisture Sensitivity Level1 (Unlimited)