参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current3.8 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 50 C
Length3.3 mm
Height1.04 mm
ImageVishay Semiconductors SI7119DN-T1-E3
Product CategoryMOSFET
Rds On - Drain-Source Resistance1.05 Ohms
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-1212-8
DescriptionMOSFET -200V Vds 20V Vgs PowerPAK 1212-8
PackagingReel
PackagingCut Tape
PackagingMouseReel
Width3.3 mm
Mounting StyleSMD/SMT
TARIC8541290000
BrandVishay Semiconductors
Factory Pack Quantity3000
Qg - Gate Charge25 nC
MXHTS85412999
Product TypeMOSFET
SeriesSI7
ManufacturerVishay
RoHS Details
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.013721 oz
CNHTS8541290000
Part # AliasesSI7119DN-E3
Pd - Power Dissipation52 W
TradenameTrenchFET
Number of Channels1 Channel