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SI2306BDS-T1-E3

SI2306BDS-T1-E3

厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000048350632
描述：MOSFET N-CH 30V 3.16A SOT23-3MOSFET 30V 4.0A 0.75WMOSFET 30V 4.0A 0.75W
最新价格近期成交17单+
数量价格（含税）
1¥1.7666
100¥1.4222
750¥1.2666
1500¥1.1889
3000¥1.1334
库存：66交期：3-5Days起订：1增量：1
数量：
X
1.7666（单价）
合计：
￥1.77
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3.16 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Width1.6 mm
Rds On - Drain-Source Resistance47 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Height1.45 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge3 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541210101
CAHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
Factory Pack Quantity3000
BrandVishay Semiconductors
SeriesSI2
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET 30V 4.0A 0.75W
ManufacturerVishay
TARIC8541290000
ImageVishay Semiconductors SI2306BDS-T1-E3
Product CategoryMOSFET
Fall Time6 ns
RoHS Details
Unit Weight0.000282 oz
SubcategoryMOSFETs
Part # AliasesSI2306BDS-E3
Pd - Power Dissipation0.75 W
USHTS8541210095
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time12 ns