STF11NM80

STF11NM80

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000048350681

描述：MOSFET N-CH 800V 11A TO220FP EMEA; EMEA;

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min8 S

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current11 A

Vgs - Gate-Source Voltage- 30 V, + 30 V

Minimum Operating Temperature- 65 C

Length10.4 mm

Height9.3 mm

JPHTS8541290100

CAHTS8541290000

Typical Turn-On Delay Time22 ns

Rds On - Drain-Source Resistance400 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 150 C

Typical Turn-Off Delay Time46 ns

ImageSTMicroelectronics STF11NM80

Package / CaseTO-220-3

PackagingTube

Width4.6 mm

BrandSTMicroelectronics

SubcategoryMOSFETs

Product CategoryMOSFET

Mounting StyleThrough Hole

TARIC8541210000

DescriptionMOSFET N-Ch 800 Volt 11 Amp Power MDmesh

ManufacturerSTMicroelectronics

Factory Pack Quantity1000

Qg - Gate Charge43.6 nC

RoHS Details

MXHTS85412101

SeriesSTF11NM80

Product TypeMOSFET

USHTS8541290075

Channel ModeEnhancement

Fall Time15 ns

Unit Weight0.071959 oz

CNHTS8541210000

Pd - Power Dissipation35 W

TradenameMDmesh

Vds - Drain-Source Breakdown Voltage800 V

Number of Channels1 Channel

Rise Time17 ns

TypeMOSFET