参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current115 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length2.2 mm
Height1 mm
KRHTS8541219000
ManufacturerDiodes Incorporated
Typical Turn-On Delay Time10 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
ProductMOSFET Small Signal
CAHTS8541210000
Rds On - Drain-Source Resistance6 Ohms
Transistor Type2 N-Channel
Factory Pack Quantity3000
Typical Turn-Off Delay Time33 ns
Package / CaseSOT-363-6
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width1.35 mm
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMN66D0LDW-7
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 250mW 60Vdss
Product TypeMOSFET
MXHTS85412101
SeriesDMN66
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.000212 oz
CNHTS8541210000
Pd - Power Dissipation250 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel