参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO4 V
MXHTS85412999
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.25 V
DC Collector/Base Gain hfe Min100
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Factory Pack Quantity3000
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
TARIC8541210000
SeriesMMSTA06Q
RoHS Details
DescriptionBipolar Transistors - BJT General Purpose Transistor SOT323 T&R 3K
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000212 oz
USHTS8541290095
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)