参数项参数值
参数项参数值
DC Current Gain hFE Max270
Gain Bandwidth Product fT1.5 GHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.05 A
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current50 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO3 V
Width1.25 mm
DC Collector/Base Gain hfe Min27
Height0.9 mm
Length2 mm
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
SeriesUMX4N
BrandROHM Semiconductor
Unit Weight0.002054 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Pd - Power Dissipation150 mW
DescriptionBipolar Transistors - BJT DUAL NPN 20V 50MA SOT-363
Part # AliasesUMX4N