参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 220 V
Maximum DC Collector Current0.3 A
Collector- Emitter Voltage VCEO Max- 200 V
Continuous Collector Current- 0.3 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.35 V
Width1.4 mm
Height1.02 mm
Length3.04 mm
MXHTS85412999
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
SeriesFMMT59
ImageDiodes Incorporated FMMT596TA
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Pd - Power Dissipation500 mW
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
USHTS8541210075
DescriptionBipolar Transistors - BJT PNP Medium Power