参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance2.2 Ohms
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time17 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
Package / CaseSOT-723-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time43 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RYM002N05T2CL
Unit Weight0.000483 oz
SeriesRYM002N05
Factory Pack Quantity8000
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
Product TypeMOSFET
Part # AliasesRYM002N05
Product CategoryMOSFET
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
DescriptionMOSFET .9V DRIVE N-Ch MOSFET
Vds - Drain-Source Breakdown Voltage50 V
USHTS8541290095
Number of Channels1 Channel
Rise Time8 ns