参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current7.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.3 ns
Rds On - Drain-Source Resistance14 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22.3 ns
MXHTS85412999
Qg - Gate Charge13.2 nC
KRHTS8541299000
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time5.3 ns
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.002610 oz
ImageDiodes Incorporated DMN3025LSS-13
TARIC8541290000
Pd - Power Dissipation1.4 W
RoHS Details
Factory Pack Quantity2500
SeriesDMN3025
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage30 V
Product TypeMOSFET
Number of Channels1 Channel
DescriptionMOSFET 30V N-CH MOSFET
SubcategoryMOSFETs
Rise Time4.4 ns
USHTS8541290095