参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage2.25 V
Width5.31 mm
Height20.7 mm
Length15.87 mm
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
Package / CaseTO-247-3
Mounting StyleThrough Hole
CAHTS8541290000
Minimum Operating Temperature- 40 C
PackagingTube
Maximum Operating Temperature+ 175 C
Factory Pack Quantity240
CNHTS8541290000
DescriptionIGBT Transistors HIGH SPEED SWITCHING
ImageInfineon Technologies IKW50N60H3
BrandInfineon Technologies
SeriesHighSpeed 3
Product TypeIGBT Transistors
TARIC8541290000
ManufacturerInfineon
Product CategoryIGBT Transistors
RoHS Details
Unit Weight1.340411 oz
SubcategoryIGBTs
Continuous Collector Current at 25 C100 A
Part # AliasesSP000852244 IKW5N6H3XK IKW50N60H3FKSA1
Pd - Power Dissipation333 W
Continuous Collector Current Ic Max50 A
USHTS8541290095
TradenameTRENCHSTOP