参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage450 mV, 1.1 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current680 mA, 460 mA
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time3 ns, 7 ns
Rds On - Drain-Source Resistance450 mOhms, 1.1 Ohms
Typical Turn-Off Delay Time17 ns, 55 ns
Minimum Operating Temperature- 55 C
Package / CaseTSOT-26-6
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Qg - Gate Charge1.64 nC, 1.1 nC
Maximum Operating Temperature+ 175 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMC3730UVT-7
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 25V Complimentary Pair Enhancemnt Mode
Channel ModeEnhancement
Fall Time13 ns, 35 ns
USHTS8541210095
Unit Weight0.000459 oz
Pd - Power Dissipation0.9 W
Vds - Drain-Source Breakdown Voltage25 V
Number of Channels2 Channel
Rise Time8 ns, 9 ns