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DMG9933USD-13
厂牌：DIODES(美台)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000048357183
描述：MOSFET DUAL P-CH 20V 4.6A
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Id - Continuous Drain Current4.6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
KRHTS8541299000
Typical Turn-On Delay Time12.45 ns, 12.45 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8542390990
ProductMOSFET Small Signal
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance55 mOhms, 55 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time46.52 ns, 46.52 ns
Package / CaseSO-8
Factory Pack Quantity2500
BrandDiodes Incorporated
TARIC8542399000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated DMG9933USD-13
SubcategoryMOSFETs
Qg - Gate Charge6.5 nC
Product CategoryMOSFET
DescriptionMOSFET P-Ch Dual MOSFE 20V VDSS 12V VGSS
Product TypeMOSFET
MXHTS85423999
SeriesDMG9933
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.002610 oz
Fall Time22.19 ns, 22.19 ns
CNHTS8541290000
Pd - Power Dissipation1.15 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time10.29 ns, 10.29 ns