参数项参数值
参数项参数值
DC Current Gain hFE Max270
Gain Bandwidth Product fT135 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max- 25 V
Continuous Collector Current- 4 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 230 mV
DC Collector/Base Gain hfe Min270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V
Width3.7 mm
Height1.65 mm
Length6.7 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.003951 oz
SeriesFZT114
ImageDiodes Incorporated FZT1149ATA
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Pd - Power Dissipation2.5 W
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN High Gain & Crnt