参数项参数值
参数项参数值
Forward Transconductance - Min6.4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time1.74 ns
Width1.8 mm
Height1.3 mm
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time29.2 ns
MXHTS85412101
Length3.1 mm
KRHTS8541299000
JPHTS8541210101
CAHTS8541210000
Qg - Gate Charge15.8 nC
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Package / CaseSOT-26-6
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541290000
ImageDiodes Incorporated ZXMP3A17E6TA
TARIC8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time8.72 ns
SeriesZXMP3A
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.000282 oz
Product TypeMOSFET
DescriptionMOSFET 30V P-Chnl UMOS
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1.7 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time2.87 ns
TypeMOSFET