2DB1132R-13

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000048358262

描述：TRANSISTOR BIPO PNP 32V SOT89-3

商品参数

参数项参数值

Gain Bandwidth Product fT190 MHz

Collector- Base Voltage VCBO- 40 V

Maximum DC Collector Current- 1 A

Collector- Emitter Voltage VCEO Max- 32 V

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO- 5 V

Collector-Emitter Saturation Voltage- 125 mV

DC Collector/Base Gain hfe Min180 at - 100 mA, - 3 V

Width2.48 mm

Height1.5 mm

Length4.5 mm

MXHTS85412999

KRHTS8541299000

Package / CaseSOT-89-3

Mounting StyleSMD/SMT

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

Maximum Operating Temperature+ 150 C

CNHTS8541290000

PackagingReel

PackagingCut Tape

PackagingMouseReel

ImageDiodes Incorporated 2DB1132R-13

TARIC8541290000

RoHS Details

Series2DB11

Factory Pack Quantity2500

Product TypeBJTs - Bipolar Transistors

Pd - Power Dissipation1000 mW

BrandDiodes Incorporated

Product CategoryBipolar Transistors - BJT

SubcategoryTransistors

ManufacturerDiodes Incorporated

DescriptionBipolar Transistors - BJT 1000W -32Vceo

USHTS8541290095