参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityN-Channel
Id - Continuous Drain Current14 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time19 ns
Rds On - Drain-Source Resistance300 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
Typical Turn-Off Delay Time44 ns
ImageSTMicroelectronics STB15N80K5
Package / CaseTO-263-3
PackagingMouseReel
PackagingCut Tape
PackagingReel
SubcategoryMOSFETs
Product CategoryMOSFET
Mounting StyleSMD/SMT
DescriptionMOSFET N-Ch 800V 0.3Ohm typ MDmesh K5 14A
TARIC8541210000
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge32 nC
BrandSTMicroelectronics
MXHTS85412101
RoHS Details
USHTS8541290095
Channel ModeEnhancement
Fall Time10 ns
Unit Weight0.067021 oz
CNHTS8541210000
Pd - Power Dissipation190 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time17.6 ns