参数项参数值
参数项参数值
Forward Transconductance - Min7 S, 3 S
ConfigurationDual
TechnologySi
Id - Continuous Drain Current2.5 A, 2 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V, - 25 V,+ 25 V
Typical Turn-On Delay Time4.5 ns, 4.5 ns
Rds On - Drain-Source Resistance95 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time19 ns, 11 ns
Width1.6 mm
Height1.1 mm
Length2.9 mm
Qg - Gate Charge6.6 nC, 5.7 nC
Package / CaseSSOT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Channel ModeEnhancement
Fall Time6 ns, 13 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.001058 oz
BrandON Semiconductor / Fairchild
RoHS Details
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDC6333C
Pd - Power Dissipation960 mW
Product CategoryMOSFET
Part # AliasesFDC6333C_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage30 V
DescriptionMOSFET 30V/-30V N/P
TradenamePowerTrench
Number of Channels2 Channel
Rise Time6 ns, 13 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)