DMP1055USW-7

厂牌:DIODES(美台)
包装:--
类目:元器件 > 分立器件 > MOSFET
编号:B000048358642
描述:场效应管(MOSFET) 660mW 12V 3.8A 1个P沟道
最新价格近期成交40单+
数量价格(含税)
1¥1.3889
100¥1.0745
750¥0.8956
1500¥0.8134
3000¥0.7545
库存:767交期:3-5Days起订:1增量:1
数量:
X
1.3889(单价)
合计:
¥1.39
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3.8 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
CNHTS8541290000
MXHTS85412999
Rds On - Drain-Source Resistance150 mOhms
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Qg - Gate Charge13 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMP1055USW-7
RoHS Details
Product CategoryMOSFET
SeriesDMP1055
DescriptionMOSFET Dual P-Ch Enh FET Vdss -12V 8Vgss
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Pd - Power Dissipation1.03 W
Number of Channels1 Channel