参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current150 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time19 ns
Rds On - Drain-Source Resistance4.5 mOhms
Typical Turn-Off Delay Time24.5 ns
Qg - Gate Charge42 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
Fall Time23.4 ns
PackagingTube
Unit Weight0.011640 oz
ImageSTMicroelectronics STP105N3LL
SeriesSTP105N3LL
BrandSTMicroelectronics
Pd - Power Dissipation140 W
Factory Pack Quantity1000
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 30V 2.7mOhm 150A STripFET VI
Vds - Drain-Source Breakdown Voltage30 V
TradenameSTripFET
Number of Channels1 Channel
Rise Time91 ns