参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT60 MHz
Collector- Base Voltage VCBO- 500 V
Maximum DC Collector Current- 150 mA
Collector- Emitter Voltage VCEO Max- 500 V
Continuous Collector Current- 150 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 500 mV
DC Collector/Base Gain hfe Min100
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
Unit Weight0.846575 oz
ImageDiodes Incorporated FMMT560QTA
BrandDiodes Incorporated
Pd - Power Dissipation500 mW
Factory Pack Quantity3000
ManufacturerDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT SS Hi Voltage Transistor
USHTS8541290095