参数项参数值
参数项参数值
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max- 50 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 500 mV
Width0.8 mm
Length1.6 mm
Height0.75 mm
DC Collector/Base Gain hfe Min120
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-523-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
BrandDiodes Incorporated
Series2DA17
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
TARIC8541210000
Factory Pack Quantity3000
RoHS Details
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP BIPOLAR
ImageDiodes Incorporated 2DA1774Q-7-F
Unit Weight0.000071 oz
SubcategoryTransistors
USHTS8541210095
Pd - Power Dissipation150 mW