参数项参数值
参数项参数值
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max32 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min82
Width2.48 mm
Height1.5 mm
Length4.5 mm
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated 2DD1664P-13
RoHS Details
Series2DD16
Factory Pack Quantity2500
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1000 mW
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT 1000W 32Vceo