参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage- 2.2 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current2.7 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.4 ns
Rds On - Drain-Source Resistance95 mOhms
Transistor Type2 P-Channel
Minimum Operating Temperature- 55 C
Package / CaseTSOT-26-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge6.8 nC
PackagingCut Tape
PackagingReel
BrandDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMP3165SVT-7
TARIC8541290000
ManufacturerDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V 30V TSOT26 T&R 3K
Product CategoryMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time21.8 ns
USHTS8541290095
Pd - Power Dissipation0.88 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time17.9 ns