BCX52TA

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000048359167

描述：Trans GP BJT PNP 60V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R

商品参数

参数项参数值

DC Current Gain hFE Max25 at 5 mA, 2 V

Gain Bandwidth Product fT150 MHz

Collector- Base Voltage VCBO60 V

Maximum DC Collector Current1 A

Collector- Emitter Voltage VCEO Max60 V

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO5 V

DC Collector/Base Gain hfe Min25 at 5 mA, 2 V, 40 at 150 mA, 2 V, 25 at 500 mA, 2 V

Width2.5 mm

Height1.5 mm

Length4.5 mm

MXHTS85412999

KRHTS8541299000

Package / CaseSOT-89-3

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

JPHTS8541290100

Minimum Operating Temperature- 65 C

CAHTS8541290000

CNHTS8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

SeriesBCX52

Pd - Power Dissipation1000 mW

BrandDiodes Incorporated

ImageDiodes Incorporated BCX52TA

Product TypeBJTs - Bipolar Transistors

SubcategoryTransistors

Factory Pack Quantity1000

ManufacturerDiodes Incorporated

Product CategoryBipolar Transistors - BJT

USHTS8541290095

DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K