参数项参数值
参数项参数值
DC Current Gain hFE Max180
Gain Bandwidth Product fT3.2 GHz
Collector- Base Voltage VCBO20 V
Maximum DC Collector Current0.05 A
Collector- Emitter Voltage VCEO Max11 V
Continuous Collector Current50 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO3 V
DC Collector/Base Gain hfe Min56
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SC3838KT146N
TARIC8541290000
Unit Weight0.000282 oz
RoHS Details
Series2SC3838K
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SC3838K
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 11V 50MA
USHTS8541290095