参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
CNHTS8541290000
MXHTS85412999
Rds On - Drain-Source Resistance40 mOhms
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseU-DFN2020-6
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge11.2 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Unit Weight0.687842 oz
Pd - Power Dissipation1.36 W
Number of Channels2 Channel