参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Length1.6 mm
Width1.2 mm
Height0.6 mm
KRHTS8541219000
DC Collector/Base Gain hfe Min35
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
CNHTS8541210000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Factory Pack Quantity3000
ImageDiodes Incorporated MMDT2222V-7
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
TARIC8541210000
RoHS Details
SeriesMMDT22
DescriptionBipolar Transistors - BJT NPN BIPOLAR
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000106 oz
USHTS8541210095
Pd - Power Dissipation150 mW