参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current136 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance1.7 mOhms
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSO-8
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageON Semiconductor NTMFS4C022NT1G
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
SeriesNTMFS4C022N
SubcategoryMOSFETs
Factory Pack Quantity1500
Product CategoryMOSFET
BrandON Semiconductor
Product TypeMOSFET
Unit Weight0.003781 oz
DescriptionMOSFET TRENCH 6 30V NCH
ManufacturerON Semiconductor
USHTS8541290095
Pd - Power Dissipation3.1 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)