NTJD4105CT1G

厂牌：ON(安森美)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000048362939

描述：MOSFET N+P 20,8V 630MA SOT-363

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商品参数

参数项参数值

Forward Transconductance - Min2 S, 2 S

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage600 mV, 450 mV

TechnologySi

Id - Continuous Drain Current630 mA, 775 mA

Transistor PolarityN-Channel, P-Channel

Typical Turn-On Delay Time83 ns, 13 ns

Width1.25 mm

Height0.9 mm

Rds On - Drain-Source Resistance375 mOhms, 900 mOhms

Transistor Type1 N-Channel, 1 P-Channel

Typical Turn-Off Delay Time786 ns, 50 ns

MXHTS85412999

Length2 mm

KRHTS8541219000

JPHTS8541290100

CAHTS8541290000

Qg - Gate Charge1.3 nC, 2.2 nC

Mounting StyleSMD/SMT

Package / CaseSOT-363-6

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

ProductMOSFET Small Signal

CNHTS8541290000

ImageON Semiconductor NTJD4105CT1G

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

RoHS Details

Channel ModeEnhancement

Fall Time506 ns, 36 ns

SeriesNTJD4105C

Factory Pack Quantity3000

SubcategoryMOSFETs

Product CategoryMOSFET

BrandON Semiconductor

Unit Weight0.000265 oz

Product TypeMOSFET

DescriptionMOSFET 20V/-8V 0.63A/-.775A Complementary

ManufacturerON Semiconductor

USHTS8541210095

Vds - Drain-Source Breakdown Voltage20 V, 8 V

Number of Channels2 Channel

Rise Time227 ns, 23 ns

TypeMOSFET