参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min7 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage450 mV
Transistor PolarityP-Channel
Id - Continuous Drain Current5 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541299000
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Length2.9 mm
Height1.45 mm
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance50 MOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time28 ns
Package / CaseSOT-23-3
ImageVishay / Siliconix SQ2315ES-T1_GE3
PackagingReel
PackagingMouseReel
PackagingCut Tape
Width1.6 mm
Maximum Operating Temperature+ 175 C
BrandVishay / Siliconix
TARIC8541210000
Mounting StyleSMD/SMT
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET P-Channel 12V AEC-Q101 Qualified
ManufacturerVishay
Factory Pack Quantity3000
Qg - Gate Charge9 nC
MXHTS85412999
RoHS Details
SeriesSQ
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Fall Time13 ns
Unit Weight0.000282 oz
CNHTS8541290000
Pd - Power Dissipation2 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time19 ns