参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.7 mm
Rds On - Drain-Source Resistance1800 mOhms
Height15.49 mm
Length10.41 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge20 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity50
CNHTS8541290000
BrandVishay Semiconductors
ManufacturerVishay
SeriesIRFI
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET 400V N-CH HEXFET
ImageVishay Semiconductors IRFI720GPBF
Product TypeMOSFET
RoHS Details
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Pd - Power Dissipation30 W
Number of Channels1 Channel