SIDR626LDP-T1-RE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000048375716

描述：MOSFET N-CH 60V 204A POWERPAK SO

商品参数

参数项参数值

Forward Transconductance - Min140 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current204 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time40 ns

Rds On - Drain-Source Resistance1.2 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time47 ns

Qg - Gate Charge89 nC

Package / CasePowerPAK-SO-8

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 155 C

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time20 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

ImageVishay / Siliconix SIDR626LDP-T1-RE3

BrandVishay / Siliconix

Factory Pack Quantity3000

Pd - Power Dissipation125 W

Product TypeMOSFET

ManufacturerVishay

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET N-Channel 60 V (D-S) MOSFET PowerPAK SO-8 double cooling logic-level , 1.5 mO @ 10V mO @ 7.5V 2.1 mO @ 4.5V

Vds - Drain-Source Breakdown Voltage60 V

USHTS8541290095

TradenameTrenchFET

Number of Channels1 Channel

Rise Time235 ns