参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
ManufacturerSTMicroelectronics
PackagingCut Tape
PackagingReel
PackagingMouseReel
KRHTS8541299000
Factory Pack Quantity4000
Minimum Operating Temperature- 55 C
JPHTS8541290100
BrandSTMicroelectronics
Rds On - Drain-Source Resistance1.5 Ohms
Transistor Type1 N-Channel Power MOSFET
CAHTS8541290000
Package / CaseSOT-223-4
TARIC8542319000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
RoHS Details
ImageSTMicroelectronics STN1NF20
Qg - Gate Charge5.7 nC
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Channel 1.1 Ohm 200V 1A STripFET II
Product TypeMOSFET
MXHTS85423102
SeriesSTN1NF20
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.008818 oz
Fall Time12.4 ns
CNHTS8541210000
Pd - Power Dissipation2 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time5.6 ns