STD10N60DM2

STD10N60DM2

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000048375861

描述：Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current8 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 25 V, + 25 V

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Product CategoryMOSFET

Typical Turn-On Delay Time11 ns

ImageSTMicroelectronics STD10N60DM2

Rds On - Drain-Source Resistance440 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time28 ns

Maximum Operating Temperature+ 150 C

Package / CaseTO-252-3

PackagingReel

PackagingCut Tape

DescriptionMOSFET PTD HIGH VOLTAGE

Mounting StyleSMD/SMT

TARIC8541290000

BrandSTMicroelectronics

Qg - Gate Charge15 nC

Factory Pack Quantity2500

Product TypeMOSFET

MXHTS85412999

ManufacturerSTMicroelectronics

RoHS Details

SeriesSTD10N60DM2

SubcategoryMOSFETs

USHTS8541290095

Channel ModeEnhancement

Fall Time11.5 ns

Unit Weight0.011993 oz

CNHTS8541290000

Pd - Power Dissipation109 W

TradenameMDmesh

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time5 ns