参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.4 mm
Height1 mm
MXHTS85412101
Length3 mm
CNHTS8541210000
Collector-Emitter Saturation Voltage- 600 mV
KRHTS8541219000
DC Collector/Base Gain hfe Min30 at - 2 A, - 5 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-23-3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DPBT8105-7
Factory Pack Quantity3000
SeriesDPBT8105
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 1A
USHTS8541210095
Unit Weight0.000282 oz
Pd - Power Dissipation300 mW