参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current26.5 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance63 mOhms
ImageSTMicroelectronics STB57N65M5
Package / CaseTO-263-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
SubcategoryMOSFETs
BrandSTMicroelectronics
TARIC8541210000
Mounting StyleSMD/SMT
Product CategoryMOSFET
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Factory Pack Quantity1000
Qg - Gate Charge98 nC
MXHTS85412999
RoHS Details
SeriesMdmesh M5
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation250 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel