参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.4 mm
Height15.65 mm
Rds On - Drain-Source Resistance36 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length10 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge73.3 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541210000
ImageInfineon / IR IRF1310NPBF
TARIC8541290000
PackagingTube
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity1000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandInfineon / IR
Unit Weight0.211644 oz
Product TypeMOSFET
DescriptionMOSFET MOSFT 100V 42A 36mOhm 73.3nC
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation160 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel