参数项参数值
参数项参数值
DC Current Gain hFE Max63 at 150 mA, 2 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V
Width2.5 mm
Height1.5 mm
Length4.5 mm
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
SeriesBCX52
Pd - Power Dissipation1000 mW
BrandDiodes Incorporated
ImageDiodes Incorporated BCX5210TA
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity1000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
Moisture Sensitivity Level1 (Unlimited)