DMN65D8LDWQ-7

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000048577479

描述：DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - 60V SOT363 AECQ10 AUALIFIED

商品参数

参数项参数值

ConfigurationDual

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current200 mA

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

MXHTS85412999

KRHTS8541299000

CNHTS8541290000

Rds On - Drain-Source Resistance6 Ohms

Transistor Type2 N-Channel

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Package / CaseSOT-363-6

Mounting StyleSMD/SMT

Qg - Gate Charge0.87 nC

Maximum Operating Temperature+ 150 C

PackagingReel

PackagingMouseReel

PackagingCut Tape

RoHS Details

BrandDiodes Incorporated

Product CategoryMOSFET

Factory Pack Quantity3000

ImageDiodes Incorporated DMN65D8LDWQ-7

TARIC8541290000

Product TypeMOSFET

SeriesDMN65D

ManufacturerDiodes Incorporated

DescriptionMOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd

SubcategoryMOSFETs

Channel ModeEnhancement

Unit Weight0.000265 oz

USHTS8541290095

Pd - Power Dissipation400 W

Number of Channels2 Channel