DSS8110Y-7

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000048577656

描述：Trans GP BJT NPN 100V 1A 625mW 6-Pin SOT-363 T/R

商品参数

参数项参数值

DC Current Gain hFE Max500

Gain Bandwidth Product fT100 MHz

Collector- Base Voltage VCBO120 V

Collector- Emitter Voltage VCEO Max100 V

Continuous Collector Current1 A

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO5 V

MXHTS85412999

CNHTS8541210000

Collector-Emitter Saturation Voltage0.2 V

KRHTS8541219000

DC Collector/Base Gain hfe Min80

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Mounting StyleSMD/SMT

PackagingReel

PackagingCut Tape

PackagingMouseReel

Package / CaseSOT-363-6

Maximum Operating Temperature+ 150 C

BrandDiodes Incorporated

ManufacturerDiodes Incorporated

TARIC8541290000

RoHS Details

SubcategoryTransistors

ImageDiodes Incorporated DSS8110Y-7

Factory Pack Quantity3000

SeriesDSS8110

Product CategoryBipolar Transistors - BJT

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT BIPOLAR TRANS NPN

USHTS8541210075

Unit Weight0.000265 oz

Pd - Power Dissipation625 mW

Moisture Sensitivity Level1 (Unlimited)