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ZXMN2A01E6TA
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000048577806
描述：场效应管(MOSFET) 1.1W 20V 2.5A 1个N沟道
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3.1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time2.49 ns
Width1.8 mm
Rds On - Drain-Source Resistance225 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.47 ns
Height1.3 mm
Length3.1 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge3 nC
Mounting StyleSMD/SMT
Package / CaseSOT-26-6
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductMOSFET Small Signal
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXMN2
Channel ModeEnhancement
Product CategoryMOSFET
ManufacturerDiodes Incorporated
TARIC8541290000
DescriptionMOSFET 20V N-Chnl UMOS
ImageDiodes Incorporated ZXMN2A01E6TA
Fall Time5.21 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.000529 oz
Pd - Power Dissipation1.1 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time5.21 ns
TypeMOSFET