ZXTN19020DGTA

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000048577848

描述：ZXTN19020DG Series NPN 20 V 9 A High Gain Power Transistor SMT - SOT-223-3

商品参数

参数项参数值

DC Current Gain hFE Max300

Gain Bandwidth Product fT160 MHz

Collector- Base Voltage VCBO70 V

Maximum DC Collector Current9 A

Collector- Emitter Voltage VCEO Max20 V

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO7 V

Width3.7 mm

Height1.65 mm

DC Collector/Base Gain hfe Min300 at 100 mA, 2 V, 260 at 2 A, 2 V, 130 at 9 A, 2 V, 50 at 15 A, 2 V

Length6.7 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Package / CaseSOT-223-4

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

Minimum Operating Temperature- 55 C

CNHTS8541290000

Factory Pack Quantity1000

BrandDiodes Incorporated

SeriesZXTN190

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT NPN 20V HIGH GAIN

ManufacturerDiodes Incorporated

TARIC8541290000

ImageDiodes Incorporated ZXTN19020DGTA

Product CategoryBipolar Transistors - BJT

RoHS Details

Unit Weight0.003951 oz

SubcategoryTransistors

Pd - Power Dissipation5300 mW

USHTS8541290095