参数项参数值
参数项参数值
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.2 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage- 0.15 V
Width1.5 mm
MXHTS85412101
DC Collector/Base Gain hfe Min200
Height0.94 mm
Length3 mm
KRHTS8541219000
CNHTS8541210000
Package / CaseSC-74-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
SeriesHN1B01FDW1
BrandON Semiconductor
RoHS Details
ImageON Semiconductor HN1B01FDW1T1G
Product CategoryBipolar Transistors - BJT
Unit Weight0.000474 oz
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation380 mW
USHTS8541210095
DescriptionBipolar Transistors - BJT 200mA 60V Dual Complementary