参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current6 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance770 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge15 nC
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Factory Pack Quantity3000
CNHTS8541290000
BrandInfineon Technologies
Product TypeMOSFET
DescriptionMOSFET LOW POWER_NEW
Channel ModeEnhancement
ImageInfineon Technologies IPN80R900P7ATMA1
SeriesCoolMOS P7
TARIC8541290000
ManufacturerInfineon
Product CategoryMOSFET
Fall Time20 ns
RoHS Details
Unit Weight0.004124 oz
SubcategoryMOSFETs
Part # AliasesIPN80R900P7 SP001665000
Pd - Power Dissipation7 W
USHTS8541290095
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time8 ns