参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max1200 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage1.55 V
Package / CaseTO-247-3
Mounting StyleThrough Hole
PackagingTube
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
Factory Pack Quantity240
DescriptionIGBT Transistors IGBT PRODUCTS TrenchStop
BrandInfineon Technologies
ImageInfineon Technologies IHW20N120R5
SeriesRC
Product TypeIGBT Transistors
ManufacturerInfineon
Product CategoryIGBT Transistors
RoHS Details
Unit Weight0.211644 oz
SubcategoryIGBTs
Continuous Collector Current at 25 C40 A
Part # AliasesSP001150026 IHW20N120R5XKSA1
Pd - Power Dissipation288 W
TradenameTRENCHSTOP