参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max650 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage1.35 V
MXHTS85412999
Width5.31 mm
Height20.7 mm
Length15.87 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 40 C
PackagingTube
TARIC8541290000
RoHS Details
ImageInfineon Technologies IKW30N65ES5XKSA1
SeriesTRENCHSTOP 5 S5
BrandInfineon Technologies
Unit Weight0.213358 oz
Product TypeIGBT Transistors
Factory Pack Quantity240
ManufacturerInfineon
Continuous Collector Current at 25 C62 A
Product CategoryIGBT Transistors
SubcategoryIGBTs
Pd - Power Dissipation188 W
DescriptionIGBT Transistors INDUSTRY 14
USHTS8541290095
TradenameTRENCHSTOP
Moisture Sensitivity Level1 (Unlimited)