参数项参数值
参数项参数值
ConfigurationDual
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current1.1 A, 0.8 A
Vgs th - Gate-Source Threshold Voltage1 V, - 1 V
TechnologySi
Rds On - Drain-Source Resistance400 mOhms, 700 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time386 ns, 1247 ns
Vgs - Gate-Source Voltage- 6 V, + 6 V
Mounting StyleSMD/SMT
Typical Turn-On Delay Time4.9 ns, 5.3 ns
Minimum Operating Temperature- 50 C
Package / CaseSOT-563-6
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
BrandDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMC2710UV-7
TARIC8541290000
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 8V 24V SOT563 T&R 3K
Channel ModeEnhancement
Product CategoryMOSFET
USHTS8541210095
Fall Time174 ns, 445 ns
Pd - Power Dissipation0.46 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time3.1 ns, 2.8 ns