在线商城 
SPD02N80C3ATMA1
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000048579736
描述：MOSFET N-CH 800V 2A TO252-3
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height2.3 mm
Length6.5 mm
KRHTS8541299000
Typical Turn-On Delay Time25 ns
ManufacturerInfineon
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance2.7 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time72 ns
Package / CaseTO-252-3
Factory Pack Quantity2500
BrandInfineon Technologies
TARIC8541290000
Maximum Operating Temperature+ 150 C
Width6.22 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageInfineon Technologies SPD02N80C3ATMA1
SubcategoryMOSFETs
Qg - Gate Charge12 nC
Product CategoryMOSFET
DescriptionMOSFET LOW POWER_LEGACY
Product TypeMOSFET
MXHTS85412999
SeriesCoolMOS C3
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.139332 oz
Fall Time18 ns
CNHTS8541290000
Part # AliasesSPD02N80C3 SP001117754
Pd - Power Dissipation42 W
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time15 ns